SOI Applications

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SOI Fundamentals

Chris Edwards explores the 'tricks' semiconductor device manufacturers are using to cope with shrinking feature sizes
[New Electronics]

SOI Technology
[ISU Electrical and Computer Engineering Archives]

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Process Technology

SOI Scalability
[by Harry Gries, ASIC Methodology and EDA Technology Consultant]

Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation
[Applied Physics Letters, Vol. 96, Issue 24]

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Photonics

Ultra-high Speed, All-optical Wavelength Converters Using Single SOA and SOI Photonic Integrated Circuits
We report a new family of ultra-fast all-optical wavelength converters. The device architecture employs a single SOA and filtering elements integrated in silicon-on-insulator substrates. These schemes enable high-integration density and low power consumption. [Department of Information Technology (INTEC), Ghent University]

Device engineering for silicon photonics
[NPG Asia Materials]

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Power

A new integrated SOI power device based on self-isolation technology
[State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China]

NXP has launched the UBA2024 and UBA2024A integrated half-bridge power ICs, based on the company’s EZ-HV SOI technology
They enable the easy design of low-cost, very compact, high-reliability, long-life florescent lamp (CFL) applications. [NXP]

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Sensors/MEMS

How an SOI MEMS are built : MEMS first™ process
[SiTime]

A 12GHz bulk-micromachined RF-MEMS phase shifter by SOI layer-separation design
[IEICE Electronics Express]

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3D integration

Wireless Interconnects for Inter-tier Communication on 3D ICs
By Ankit More and Baris Taskin [Department of Electrical and Computer Engineering, Drexel University 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, USA]

Fraunhofer IZM-ASSID selects EV Group Temporary Bonding and Debonding Equipment for Devoloping Processes for High-Volume Manufacturing of 3D ICS
EVG Systems Selected for Platform Flexibility, Functionality and Industry-Proven Reliability [EV Group (EVG)]

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Last post on February 03, 2012:

STMicroelectronics predicts its new SOI-based STOD13AS power chip could be used in nearly every new smartphone or small electronic device that has an AMOLED display

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#18 - Fall/Winter 2011/12
SOI on the Roadmaps

FD-SOI: ST & 28nm SOCs; ARM & design porting
Apps – NXP automotive sensors, AMD 32nm Bulldozer
SOI Conference (IBM, Intel, Leti, GloFo, ST, ARM, Peregrine & more)
SOI Consortium – FD-SOI whitepaper overview & excerpts

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SOI reliability advantage: Soft errors

(Animated presentation courtesy of IBM)

Concerns about soft error rate have recently received a lot of attention. This is primarily caused by the increased susceptibility of circuits due to smaller geometries, decreased voltages with smaller noise margin, and reduced stored charges. Traditionally, the reliability worries due to soft errors have been focused on the memory elements; however as geometries have reached 45nm and below, the probability of a single event upset in logic circuits is very real. Logic soft errors are particularly critical because such an event produces a catastrophic system failure.

Large efforts by major suppliers, such as described in 2008 ISSCC, are underway in an attempt to create and implement design techniques to correct soft errors in bulk. However, SOI has an intrinsically well documented 5X to 10X lower soft error rate than bulk. The oxide layer acts as a block for the track of electron-holes pairs to drift to the p-n junctions.

This presentation describes the physical mechanism responsible for the significant reduction of soft errors in SOI.