SOI Applications

NEW Filter our 316 articles by market or company:

SOI Fundamentals

Process Technology

SOI Scalability
[by Harry Gries, ASIC Methodology and EDA Technology Consultant]

Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation
[Applied Physics Letters, Vol. 96, Issue 24]

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Fully Depleted SOI

Design/IP

Analog/HV/RF

Photonics

Ultra-high Speed, All-optical Wavelength Converters Using Single SOA and SOI Photonic Integrated Circuits
We report a new family of ultra-fast all-optical wavelength converters. The device architecture employs a single SOA and filtering elements integrated in silicon-on-insulator substrates. These schemes enable high-integration density and low power consumption. [Department of Information Technology (INTEC), Ghent University]

Device engineering for silicon photonics
[NPG Asia Materials]

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Power

A new integrated SOI power device based on self-isolation technology
[State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China]

NXP has launched the UBA2024 and UBA2024A integrated half-bridge power ICs, based on the company’s EZ-HV SOI technology
They enable the easy design of low-cost, very compact, high-reliability, long-life florescent lamp (CFL) applications. [NXP]

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Sensors/MEMS

3D integration

Wireless Interconnects for Inter-tier Communication on 3D ICs
By Ankit More and Baris Taskin [Department of Electrical and Computer Engineering, Drexel University 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, USA]

Fraunhofer IZM-ASSID selects EV Group Temporary Bonding and Debonding Equipment for Devoloping Processes for High-Volume Manufacturing of 3D ICS
EVG Systems Selected for Platform Flexibility, Functionality and Industry-Proven Reliability [EV Group (EVG)]

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Advanced Substrate News

Last post on February 03, 2012:

STMicroelectronics predicts its new SOI-based STOD13AS power chip could be used in nearly every new smartphone or small electronic device that has an AMOLED display

> Read this post

#18 - Fall/Winter 2011/12
SOI on the Roadmaps

  • FD-SOI: ST & 28nm SOCs; ARM & design porting
  • Apps – NXP automotive sensors, AMD 32nm Bulldozer
  • SOI Conference (IBM, Intel, Leti, GloFo, ST, ARM, Peregrine & more)
  • SOI Consortium – FD-SOI whitepaper overview & excerpts

> Read the full edition

Photonics

Feb. 23, 2011Ultra-high Speed, All-optical Wavelength Converters Using Single SOA and SOI Photonic Integrated Circuits
We report a new family of ultra-fast all-optical wavelength converters. The device architecture employs a single SOA and filtering elements integrated in silicon-on-insulator substrates. These schemes enable high-integration density and low power consumption.
[Department of Information Technology (INTEC), Ghent University]

Jan. 20, 2011Device engineering for silicon photonics
[NPG Asia Materials]

Nov. 29, 2010Short, On-Chip Light Pulses Will Enable Ultrafast Data Transfer Within Computers
[Photonics Online]

Nov. 1, 2010All-silicon photonic crystal photoconductor on silicon-on-insulator at telecom wavelength
We demonstrate an all-silicon photodetector working at telecom wavelength. The device is a simple metal-semiconductor-metal detector fabricated on silicon-on-insulator. A two-dimensional photonic crystal nanocavity (Q = 60,000) is used to increase the response that arises from the linear and two-photon absorption of silicon. The responsivity of the detector is about 20 mA/W and its bandwidth is larger than 1 GHz.
[Optics Express, Vol. 18, Issue 23, pp. 23965-23972 (2010)]

Oct. 18, 2010High bandwidth on-chip silicon photonic interleaver
We demonstrate a 120 GHz 3-dB bandwidth on-chip silicon photonic interleaver with a flat passband over a broad spectral range of 70 nm. The structure of the interleaver is based on an asymmetric Mach-Zehnder interferometer (MZI) with 3 ring resonators coupled to the arms of the MZI. The transmission spectra of this device depict a rapid roll-off on the band edges, where the 20-dB bandwidth is measured to be 142 GHz. This device is optimized for operation in the C-band with a channel crosstalk as low as 20 dB. The device also has full reconfiguration capability to compensate for fabrication imperfections.
[OPTICS EXPRESS, Vol. 18, No. 22]

Sep. 3, 2010InGaP CQDs make compact fully integrated PICs
SPIE researchers have used InGaP colloidal quantum dots and unconventional fabrication techniques to produce cheaper, smaller PICs integrated onto a single chip.
[I-Micronews]

Aug. 16, 2010Wavelength multicasting in silicon photonic nanowires
By Aleksandr Biberman, Benjamin G. Lee, Amy C. Turner-Foster, Mark A. Foster, Michal Lipson, Alexander L. Gaeta and Keren Bergman
[Cornell Nanophotonics Group]

Jul. 28, 2010Intel showcases 50 Gb/s silicon link
Technology giant makes significant advance by integrating four DFB lasers based on the hybrid InP design first developed in 2006.
[Optics.org]

Jul. 19, 2010First demonstration of long-haul transmission using silicon microring modulators
By Biberman, A., Manipatruni, S., Ophir, N., Chen, L., Lipson, M. and Bergman, K.
[Cornell Nanophotonics Group]

May. 31, 2010Saturation of the Raman amplification by self-phase modulation in silicon nanowaveguides
[Cornell University]

May. 24, 2010SOI Digital Technology Roadmap
by Horacio Mendez, SOI Industry Consortium
[Soi Industry Consortium]

May. 23, 2010Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom-band-derived pump source
by Sanja Zlatanovic, Jung S. Park, Slaven Moro, Jose M. Chavez Boggio, Ivan B. Divliansky, Nikola Alic, Shayan Mookherjea & Stojan Radic
[Nature Photonics]

May. 16, 2010Microwave Photonic Phase Shifter Based on Tunable Silicon-on-Insulator Microring Resonator
By Pu, Minhao; Liu, Liu; Xue, Weiqi; Frandsen, Lars Hagedorn; Ou, Haiyan; Yvind, Kresten; Hvam, Jørn Märcher
[2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS). San José, CA, USA, 2010]

May. 11, 2010Peregrine to manufacture 180-nanometer silicon-on-sapphire CMOS RF integrted cicuits on IBM's 8-inch fab
[Military & Aerospace Electronics]

Jan. 25, 2010Integrated photonic circuit in silicon on insulator for Fourier domain optical coherence tomography
By Günay Yurtsever, Pieter Dumon, Wim Bogaerts, Roel Baets
[Ghent University – IMEC, Photonics Research Group, Department of Information Technology (INTEC), Sint-Pietersnieuwstraat 41, 9000 Gent, Belgium]

Jul. 30, 2009Luxtera: At SPIE/Photonics West ’09, Luxtera’s “Blazar” was both the overall “Best In Show” and winner of the Photonics Systems category for the 2008 Prism Awards
Blazer is a monolithic optoelectronic Optical Active Cable assembly reaching up to 300 meters and aggregated data rates up to 40 Gbps.
[Advanced Substrate News]

Jun. 18, 2009Silicon-on-insulator waveguide photodetector with self-ion-implantation-engineered-enhanced infrared response
By Knights, A. P. Bradley, J. D. B. Gou, S. H. Jessop, P. E.
[IEEE Xplore]

Jun. 3, 2009Luxtera announced production status of the world’s first commercial silicon CMOS photonics fabrication process
Freescale is providing the foundry services, the first to commercially integrate SOI photonics and SOI CMOS electronics in a single high-volume, low-cost chip for high performance computing, data communications, and mainstream consumer electronics markets.
[Luxtera]

Jun. 3, 2009Luxtera Announces Production Status of World’s First Commercial Silicon CMOS Photonics Fabrication Process
[Business Wire]

Mar. 23, 2009Luxtera launches world's longest active optical cable to meet design demands of data centers
[Luxtera]

Feb. 29, 2008Silicon-on-insulator eight-channel optical multiplexer based on a cascade of asymmetric Mach-Zehnder interferometers
By Dae Woong Kim, Assia Barkai, Richard Jones, Nomi Elek, Hat Nguyen, and Ansheng Liu
[Optics Letters, Vol. 33, Issue 5, pp. 530-532 (2008)]

Oct. 31, 2007The path towards CMOS-photonics monolithic integration
By Yuri Vlasov of IBM.
[Advanced Substrate News]

Oct. 31, 2007Intel’s Approach to Integrated Silicon Photonics
Ansheng Liu of Intel explains why SOI is the ideal substrate for the company’s integrated approach to silicon photonics.
[Advanced Substrate News]

Oct. 31, 2007SOI Technology for Tunable Optical Add-Drop Multiplexers
Giacometti Fabrizio of Pirelli Labs describes how SOI is leveraged in a new generation of optical telecom components.
[Advanced Substrate News]

Jul. 11, 2005Innovative Silicon - Zero Capacitor Embedded Memory Technology Reverses SOI vs. Bulk Economics
[Advanced Substrate News]