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Updated: April 30, 2012
Chris Edwards explores the 'tricks' semiconductor device manufacturers are using to cope with shrinking feature sizes
[New Electronics]
SOI Technology
[ISU Electrical and Computer Engineering Archives]
SOI Scalability
[by Harry Gries, ASIC Methodology and EDA Technology Consultant]
Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation
[Applied Physics Letters, Vol. 96, Issue 24]
Soitec outlines fully depleted product roadmap for advanced planar and three-dimensional transistors
[Soitec]
NEW Leti: Adding Strain to FD-SOI for 20nm and Beyond
[Advanced Substrate News]
Interview With ST-Ericsson's Chief Chip Architect: SOCs on 28nm FD-SOI – When, Why and How
ST-Ericsson's Chief Chip Architect Louis Tannyeres talks with ASN about the move to 28nm FD-SOI for smartphones and tablet SOCs.
[Advanced Substrate News]
Peregrine's New SP5T RF Switch Offers High Isolation for Infrastructure Apps
[Consumer Electronics Net]
RF Micro Devices(R) Introduces First Silicon Switches for 3G Smartphones and Other High Performance Applications
[RF Micro Devices]
Ultra-high Speed, All-optical Wavelength Converters Using Single SOA and SOI Photonic Integrated Circuits
We report a new family of ultra-fast all-optical wavelength converters. The device architecture employs a single SOA and filtering elements integrated in silicon-on-insulator substrates. These schemes enable high-integration density and low power consumption.
[Department of Information Technology (INTEC), Ghent University]
Device engineering for silicon photonics
[NPG Asia Materials]
NEW Leti: Adding Strain to FD-SOI for 20nm and Beyond
[Advanced Substrate News]
Interview With ST-Ericsson's Chief Chip Architect: SOCs on 28nm FD-SOI – When, Why and How
ST-Ericsson's Chief Chip Architect Louis Tannyeres talks with ASN about the move to 28nm FD-SOI for smartphones and tablet SOCs.
[Advanced Substrate News]
SiTime: Using SOI Technology to Develop High-Performance MEMS Timing Solutions
A radical SOI-based approach puts SiTime at the top of the fast-growing silicon-based timing market.
[Advanced Substrate News ]
Wireless Interconnects for Inter-tier Communication on 3D ICs
By Ankit More and Baris Taskin
[Department of Electrical and Computer Engineering, Drexel University 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, USA]
Fraunhofer IZM-ASSID selects EV Group Temporary Bonding and Debonding Equipment for Devoloping Processes for High-Volume Manufacturing of 3D ICS
EVG Systems Selected for Platform Flexibility, Functionality and Industry-Proven Reliability
[EV Group (EVG)]

Consortium Website – What’s New
#19 – Spring/Summer 2012
Special Edition: FD-SOI Industrialization
Leading Silicon Wafer Supplier Expands Silicon-on Insulator Ecosystem

Download this press release
in pdf format
Boston, MA, March 16, 2010 – The SOI Industry Consortium, aimed at accelerating silicon-on-insulator (SOI) innovation across broad markets, announced today that MEMC Electronic Materials, Inc. (NYSE: WFR) has joined the worldwide organization. MEMC is a global leader in the manufacture and sales of semiconductor materials, including SOI, partially depleted SOI, fully depleted SOI, strained SOI and other SiGe-on-insulator subtrates offerings. The addition of MEMC, which has a fifty-year history pioneering wafer technologies, expands opportunities for the SOI ecosystem to ensure alignment between suppliers and users.
“MEMC brings a track record of silicon wafer innovations and technological advances that improve semiconductor performance and manufacturing yields," said Dr. Srikanth Kommu , Director of SOI R&D at MEMC Electronics Materials, Inc. “We look forward to collaborative relationships with other members of the SOI Industry Consortium, which will benefit the fast-growing base of SOI users across the industry.”
“We are extremely pleased to have MEMC join us,”said Horacio Mendez, executive director of the SOI Industry Consortium. “As a leading supplier of silicon wafer technologies, MEMC brings valuable expertise to our ecosystem of companies and help ensure alignment in this time of SOI market acceleration.”
The SOI Industry Consortium welcomes companies, organizations, government and academic institutions to join the group in applying the full benefits of SOI-based electronics to global sustainability challenges, lowering the total cost-of-ownership of electronics and improving the quality of life.
About the SOI Industry Consortium:
The SOI Industry Consortium is chartered with accelerating silicon-on-insulator (SOI) innovation into broad markets by promoting the benefits of SOI technology and reducing the barriers to adoption. Representing innovation leaders from the entire electronics industry infrastructure, current SOI Industry Consortium members include: AMD, Applied Materials, ARM, Cadence Design Systems, CEA-Léti, Freescale Semiconductor, GLOBALFOUNDRIES, IBM, IMEC, Infotech, Innovative Silicon, Kanazawa Institute of Technology , KLA-Tencor, Magma Design, MEMC, Mentor Graphics, MIT Lincoln Laboratories, Nvidia, Ritsumeikan University, Samsung, Semico, SEH Europe, Soitec, Stanford University, STMicroelectronics, Synopsys, Tyndall Institute, University of California-Berkeley, University Catholique de Louvain, UMC and Varian. Membership is open to all companies and institutions throughout the electronics industry. For more information, please visit www.soiconsortium.org.
Press Contact:
Jeff Wolf
+1 925 454 9171
jeff.wolf@soiconsortium.org
Legal Note
The views and opinions expressed by the SOI Industry Consortium through officers in the SOI Industry Consortium or in this presentation or other communication vehicles are not necessarily representative of the views and opinions of individual members. Officers of the SOI Industry Consortium speaking on behalf of the Consortium should not be considered to be speaking for the member company or companies they are associated with, but rather as representing the views of the SOI Industry Consortium. Views and opinions are also subject to change without notice, and the SOI Industry Consortium assumes no obligation to update the information in this communication or accompanying discussions.
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PRESENTATION The Revolutionary Scope of Multi-Gate Transistors
[University of California Berkeley]
ARTICLE FD-SOI: A process booster for ST-Ericsson’s next generation NovaThor, Part 1
[ST-Ericsson Technology Blog]
ARTICLE Soitec outlines fully depleted product roadmap for advanced planar and three-dimensional transistors
[Soitec]
ARTICLE Soitec provides affordable paths to higher performance, lower-power processors for mobile and consumer devices
[Soitec]
PRESENTATION ST-Ericsson announces next-gen NovaThor at 28nm, on FD-SOI
[ST-Ericsson]
ARTICLE ST-Ericsson’s Next-gen NovaThor: This Year, at 28nm, on FD-SOI Wafers from Soitec
[Advanced Substrate News]
ARTICLE Workshop: Fully Depleted SOI - February 24, 2012 - San Francisco, CA - Presentations available
[SOI Industry Consortium]