SOI Applications

NEW Filter our 316 articles by market or company:

SOI Fundamentals

Chris Edwards explores the 'tricks' semiconductor device manufacturers are using to cope with shrinking feature sizes
[New Electronics]

SOI Technology
[ISU Electrical and Computer Engineering Archives]

> More articles

Process Technology

SOI Scalability
[by Harry Gries, ASIC Methodology and EDA Technology Consultant]

Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation
[Applied Physics Letters, Vol. 96, Issue 24]

> More articles

Photonics

Ultra-high Speed, All-optical Wavelength Converters Using Single SOA and SOI Photonic Integrated Circuits
We report a new family of ultra-fast all-optical wavelength converters. The device architecture employs a single SOA and filtering elements integrated in silicon-on-insulator substrates. These schemes enable high-integration density and low power consumption. [Department of Information Technology (INTEC), Ghent University]

Device engineering for silicon photonics
[NPG Asia Materials]

> More articles

Power

A new integrated SOI power device based on self-isolation technology
[State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China]

NXP has launched the UBA2024 and UBA2024A integrated half-bridge power ICs, based on the company’s EZ-HV SOI technology
They enable the easy design of low-cost, very compact, high-reliability, long-life florescent lamp (CFL) applications. [NXP]

> More articles

Sensors/MEMS

How an SOI MEMS are built : MEMS first™ process
[SiTime]

A 12GHz bulk-micromachined RF-MEMS phase shifter by SOI layer-separation design
[IEICE Electronics Express]

> More articles

3D integration

Wireless Interconnects for Inter-tier Communication on 3D ICs
By Ankit More and Baris Taskin [Department of Electrical and Computer Engineering, Drexel University 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, USA]

Fraunhofer IZM-ASSID selects EV Group Temporary Bonding and Debonding Equipment for Devoloping Processes for High-Volume Manufacturing of 3D ICS
EVG Systems Selected for Platform Flexibility, Functionality and Industry-Proven Reliability [EV Group (EVG)]

> More articles

Last post on February 03, 2012:

STMicroelectronics predicts its new SOI-based STOD13AS power chip could be used in nearly every new smartphone or small electronic device that has an AMOLED display

> Read this post

#18 - Fall/Winter 2011/12
SOI on the Roadmaps

FD-SOI: ST & 28nm SOCs; ARM & design porting
Apps – NXP automotive sensors, AMD 32nm Bulldozer
SOI Conference (IBM, Intel, Leti, GloFo, ST, ARM, Peregrine & more)
SOI Consortium – FD-SOI whitepaper overview & excerpts

> Read the full edition

SOI industry news

Dec. 7, 2011 Intel Delays Finfets
[Electronics Weekly]

Dec. 6, 2011 ST: FD-SOI for Competitive SOCs at 28nm and Beyond
[Advanced Substrate News]

Nov. 7, 2011 Power, Performance, Cost. FDSOI lets you pick any three. Want proof? How about an ARM Cortex-M0 processor core example?
[EDA360 Insider]

Aug. 19, 2011 IBM Presents Brainlike Chips
[IEEE Spectrum]

Jun. 17, 2011 MEMC to help establish the substrate supply chain for FD SOI
[MEMC]

Feb. 14, 2011 Chenming Hu Welcomes FinFET vs. UTB-SOI Race
[Semiconductor Manufacturing & Design]

Jan. 13, 2011 Material Effects: Trading Performance For Power
Specifically, SOI-based devices differ from conventional silicon-built... SOI can be implemented in two forms: partially depleted and fully depleted... [Low-Power Engineering]

Dec. 14, 2010 Will Future Transistors Appear in Glorious 3D?
[The Applied Materials Blog]

Nov. 9, 2010 Made in IBM Labs: New Chip Technology Paves the Way to a Faster Internet
[IBM]

Sep. 1, 2010 IBM claims fastest MPU
[EE Times]

Jul. 1, 2010 EDA Consolidation Continues
It too is expanding its product portfolio and launched a comprehensive silicon-on-insulator (SoI) Design Hub, a new Web portal that will help lower barriers to adoption of SoI technology by reducing initial start-up costs, reducing time ... [Sramana Mitra on Strategy]

Jul. 1, 2010 Ellison Makes Pressure Transducers Using Silicon on Sapphire
[SA Instrumentation & Control]

Jun. 23, 2010 AMD's Opteron 4100s march into x64 price war
Both chips are implemented in a 45 nanometer silicon on insulator process and manufactured by GlobalFoundries, the chip foundry that AMD spun out last year. [The Register]

Jun. 23, 2010 IBM 'fab club' aligns 28-nm process, jabs rival
Four companies in IBM Corp.’s ''fab club’’--IBM, Samsung, GlobalFoundries, and STMicroelectronics--said that they are in collaboration to ''synchronize’’ the production of chips, based on its previously-announced, 28-nm low-power process. GlobalFoundries will not ship a 32-nm bulk technology with high-k. Instead, it will ramp a 32-nm silicon-on-insulator (SOI) technology with high-k for a customer, namely Advanced Micro Devices Inc. Not long ago, AMD spun-off its manufacturing unit into a new company called GlobalFoundries. [EE Times]

Jun. 22, 2010 Freescale Extends QorIQ Family with Quad-Core P3 Platform Optimized for Low Power
Manufactured in 45nm silicon-on-insulator process technology, the P3041 offers optimal integration and new intellectual property that delivers improved functionality for end products. The P3041 processor integrates four e500mc cores... [EDACafé]

Jun. 9, 2010 Cadence Announces Comprehensive SOI Design Hub
[Cadence]

Jun. 8, 2010 Tegal Receives Repeat Order for Tegal 4200 SE Cluster Tool Silicon DRIE Process Module
[Tegal]

Jun. 2, 2010 Kilopass Announces Embedded Logic NVM for SoCs
Gusto Delivers 4Mb One-Time-Programmable Ultra-Secure Storage for Consumer and Mobile applications [Chip Design]

May. 31, 2010 Startup proposes SOI JFETs for low power
[EE Times]

May. 25, 2010 Gefran launches dedicated website for IMPACT series melt pressure sensors
[Process and Control Today]

May. 25, 2010 Peregrine's New SP5T RF Switch Offers High Isolation for Infrastructure Apps
[Consumer Electronics Net]

May. 25, 2010 Cadence agrees to help IBM make IP for 32-nm SOI
[EE Times]

May. 11, 2010 Peregrine to manufacture 180-nanometer silicon-on-sapphire CMOS RF integrted cicuits on IBM's 8-inch fab
[Military & Aerospace Electronics]

May. 10, 2010 IBM, Peregrine roll new Si-on-sapphire process
[EE Times]

May. 6, 2010 Optical switching: faster, smaller, and more frugal
[Compound Semiconductor]

May. 5, 2010 MEMS Piezoresistive Low Pressure Sensing Die
[Design World]

Apr. 20, 2010 Clare Introduces a New High-Voltage LED Driver With 8V to 550V Input Voltage Range and Greater Than 90% Efficiency
[EDACafé]

Apr. 13, 2010 The heart of the matter: Mayo Clinic team develops on SOI
[New Electronics]

Apr. 11, 2010 AMD's Turbo Core Technology
[PC Perspective]

Apr. 8, 2010 Singapore Launches Micro Electro Mechanical Systems Consortium
[Gov Monitor]