SOI Applications

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Updated: May 22, 2013

SOI Fundamentals

Bulk vs SOI FinFET
[SOI Industry Consortium]

Chris Edwards explores the 'tricks' semiconductor device manufacturers are using to cope with shrinking feature sizes
[New Electronics]

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Process Technology

SOI Scalability
[by Harry Gries, ASIC Methodology and EDA Technology Consultant]

Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation
[Applied Physics Letters, Vol. 96, Issue 24]

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Smart power saves power
ST’s newest SOI-based smart power technology delivers big reductions in power consumption in medical equipment, hybrid-electric-vehicle chargers and more. [Advanced Substrate News]

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Photonics

Imec and Genalyte have successfully developed and produced a set of disposable SOI-photonics biosensor chips for Genalyte’s diagnostic and molecular detection equipment
[Advanced Substrate News]

Photonics on the Move
SOI is at the heart of silicon photonics. Here’s an overview of past, present and future trends. [Advanced Substrate News]

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Power

NovaThor SmartPhone Chip on 28nm FD-SOI: ST-Ericsson Blogger Tells All; PC Mag Sees Light
[Advanced Substrate News]

Leti: Adding Strain to FD-SOI for 20nm and Beyond
[Advanced Substrate News]

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Sensors/MEMS

SiTime: Using SOI Technology to Develop High-Performance MEMS Timing Solutions
A radical SOI-based approach puts SiTime at the top of the fast-growing silicon-based timing market. [Advanced Substrate News]

Imec and Genalyte have successfully developed and produced a set of disposable SOI-photonics biosensor chips for Genalyte’s diagnostic and molecular detection equipment
[Advanced Substrate News]

> More articles

3D integration

Wireless Interconnects for Inter-tier Communication on 3D ICs
By Ankit More and Baris Taskin [Department of Electrical and Computer Engineering, Drexel University 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, USA]

Fraunhofer IZM-ASSID selects EV Group Temporary Bonding and Debonding Equipment for Devoloping Processes for High-Volume Manufacturing of 3D ICS
EVG Systems Selected for Platform Flexibility, Functionality and Industry-Proven Reliability [EV Group (EVG)]

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Last post on May 23, 2013:

MOSIS, a provider of low-cost prototyping and small volume production services for custom ICs, has teamed up with ePIXfab, the European Silicon Photonics support center providing low-cost prototyping services for photonic ICs.

> Read this post

#20 – Fall/Winter 2012/13
The Move to Fully-Depleted: Manufacturing, Economics, Design

FD-SOI: ST/Chery interview; CMP's MPW runs; IBS on cost-savings
FD & wafers: SEH & Soitec
IBM's Fin-on-Oxide/FinFET
SOI Consortium – FD-SOI & wafer capacity for mobile

> Read the full edition

SOI industry news

Apr. 17, 2012 FD-SOI: A process booster for ST-Ericsson’s next generation NovaThor, Part 1
[ST-Ericsson Technology Blog]

Apr. 16, 2012 Soitec provides affordable paths to higher performance, lower-power processors for mobile and consumer devices
[Soitec]

Apr. 16, 2012 Soitec outlines fully depleted product roadmap for advanced planar and three-dimensional transistors
[Soitec]

Apr. 6, 2012 ST-Ericsson announces next-gen NovaThor at 28nm, on FD-SOI
[ST-Ericsson]

Dec. 7, 2011 Intel Delays Finfets
[Electronics Weekly]

Dec. 6, 2011 ST: FD-SOI for Competitive SOCs at 28nm and Beyond
[Advanced Substrate News]

Nov. 7, 2011 Power, Performance, Cost. FDSOI lets you pick any three. Want proof? How about an ARM Cortex-M0 processor core example?
[EDA360 Insider]

Aug. 19, 2011 IBM Presents Brainlike Chips
[IEEE Spectrum]

Jun. 17, 2011 MEMC to help establish the substrate supply chain for FD SOI
[MEMC]

Feb. 14, 2011 Chenming Hu Welcomes FinFET vs. UTB-SOI Race
[Semiconductor Manufacturing & Design]

Jan. 13, 2011 Material Effects: Trading Performance For Power
Specifically, SOI-based devices differ from conventional silicon-built... SOI can be implemented in two forms: partially depleted and fully depleted... [Low-Power Engineering]

Dec. 14, 2010 Will Future Transistors Appear in Glorious 3D?
[The Applied Materials Blog]

Nov. 9, 2010 Made in IBM Labs: New Chip Technology Paves the Way to a Faster Internet
[IBM]

Sep. 1, 2010 IBM claims fastest MPU
[EE Times]

Jul. 1, 2010 EDA Consolidation Continues
It too is expanding its product portfolio and launched a comprehensive silicon-on-insulator (SoI) Design Hub, a new Web portal that will help lower barriers to adoption of SoI technology by reducing initial start-up costs, reducing time ... [Sramana Mitra on Strategy]

Jul. 1, 2010 Ellison Makes Pressure Transducers Using Silicon on Sapphire
[SA Instrumentation & Control]

Jun. 23, 2010 AMD's Opteron 4100s march into x64 price war
Both chips are implemented in a 45 nanometer silicon on insulator process and manufactured by GlobalFoundries, the chip foundry that AMD spun out last year. [The Register]

Jun. 23, 2010 IBM 'fab club' aligns 28-nm process, jabs rival
Four companies in IBM Corp.’s ''fab club’’--IBM, Samsung, GlobalFoundries, and STMicroelectronics--said that they are in collaboration to ''synchronize’’ the production of chips, based on its previously-announced, 28-nm low-power process. GlobalFoundries will not ship a 32-nm bulk technology with high-k. Instead, it will ramp a 32-nm silicon-on-insulator (SOI) technology with high-k for a customer, namely Advanced Micro Devices Inc. Not long ago, AMD spun-off its manufacturing unit into a new company called GlobalFoundries. [EE Times]

Jun. 22, 2010 Freescale Extends QorIQ Family with Quad-Core P3 Platform Optimized for Low Power
Manufactured in 45nm silicon-on-insulator process technology, the P3041 offers optimal integration and new intellectual property that delivers improved functionality for end products. The P3041 processor integrates four e500mc cores... [EDACafé]

Jun. 9, 2010 Cadence Announces Comprehensive SOI Design Hub
[Cadence]

Jun. 8, 2010 Tegal Receives Repeat Order for Tegal 4200 SE Cluster Tool Silicon DRIE Process Module
[Tegal]

Jun. 2, 2010 Kilopass Announces Embedded Logic NVM for SoCs
Gusto Delivers 4Mb One-Time-Programmable Ultra-Secure Storage for Consumer and Mobile applications [Chip Design]

May. 31, 2010 Startup proposes SOI JFETs for low power
[EE Times]

May. 25, 2010 Gefran launches dedicated website for IMPACT series melt pressure sensors
[Process and Control Today]

May. 25, 2010 Peregrine's New SP5T RF Switch Offers High Isolation for Infrastructure Apps
[Consumer Electronics Net]

May. 25, 2010 Cadence agrees to help IBM make IP for 32-nm SOI
[EE Times]

May. 11, 2010 Peregrine to manufacture 180-nanometer silicon-on-sapphire CMOS RF integrted cicuits on IBM's 8-inch fab
[Military & Aerospace Electronics]

May. 10, 2010 IBM, Peregrine roll new Si-on-sapphire process
[EE Times]

May. 6, 2010 Optical switching: faster, smaller, and more frugal
[Compound Semiconductor]

May. 5, 2010 MEMS Piezoresistive Low Pressure Sensing Die
[Design World]

Apr. 20, 2010 Clare Introduces a New High-Voltage LED Driver With 8V to 550V Input Voltage Range and Greater Than 90% Efficiency
[EDACafé]

Apr. 13, 2010 The heart of the matter: Mayo Clinic team develops on SOI
[New Electronics]

Apr. 11, 2010 AMD's Turbo Core Technology
[PC Perspective]

Apr. 8, 2010 Singapore Launches Micro Electro Mechanical Systems Consortium
[Gov Monitor]