• Feature: SOI & Design (ARM, Synopsys, Mentor, IBM)

• Business & Technology (GSA/SOI Consortium survey, Yole, Soitec, Mattson, Raytheon, ST)

• Special Supplement: SOI Industry Consortium news

• Industry Buzz (ST & Debiotech, Intel, Hitachi & Renesas, Atmel, AMD, Toshiba, IBM, Rambus, Honeywell, Semico and more.)

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ARM UMC KLA-Tencor Corporation Cadence Design Systems Université Catholique de Louvain Tyndall National Institute TSMC AMD Symmid Semiconductor Technology Magma Design Automation

NVIDIA Lam Research Semico IBM Soitec Synopsys Applied Materials Chartered Semiconductor Manufacturing STMicroelectronics SEH Europe

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Books

Jan. 1, 2008SOI Circuit Design Concepts

by Bernstein, Kerry, Rohrer, Norman J.
2007, XVIII, 222 p., Softcover
ISBN: 978-0-387-74099-7
Summary (as quoted from the Springer website): SOI Circuit Design Concepts is an ideal introduction to the concepts
of governing SOI use and provides a firm foundation for further study of this exciting new technology paradigm.


Jan. 1, 2008FinFETs and Other Multi-Gate Transistors

Series: Series on Integrated Circuits and Systems
Jean-Pierre Colinge (Ed.)

2008, XVI, 340 p., Hardcover
ISBN: 978-0-387-71751-7
Summary (as given on the Springer website): "FinFETs and Other Multi-Gate Transistors" provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.


Jan. 1, 2007Handbook of Semiconductor Manufacturing Technology, 2nd edition

edited by R. Doering and Y. Nishi (CRC Press, Taylor and Francis Group, Boca Raton, Fl, 2007)
Chapter 4: SOI Materials and Devices, by S. Cristoloveanu and G. K. Celler (pages 4-1 to 4-52).


Nov. 13, 2006New Developments of Semiconductor Materials and Devices for High

Language: Japanese
Chapter 3, , SOI Devices, pp.108-116, by Makoto Yoshimi
CMC Books


Jan. 1, 2006Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications

by Sakurai, Takayasu, Matsuzawa, Akira, Douseki, Takakuni
2006, XV, 411 p., Hardcover
ISBN: 978-0-387-29217-5
Summary: 31 of Japan's leading FD-SOI experts explain design for ultra-low-power applications.
Leading experts expect the next-generation of device technology for ultra-low-power applications to be based on FD (fully-depleted) SOI MOSFETs. For circuit designers and university students who would like to learn about FD-SOI design, and get a basic understanding of the material technology and device physics, 31 experts from Japan have written a new textbook. It provides examples of unique circuit designs for ultra-low-power applications, as well as a brief history of SOI material technology and the basic operational mechanism of FD-SOI MOSFETs.


Apr. 1, 2005SOI Device Technology

by Makoto Yoshimi, PhD
Language: Japanese
Publisher: ED Research, Co. (Tokyo, Japan)
Summary: This book covers the history of SOI, the floating body effect and a variety of LSI applications. An SOI pioneer (he began his research over 20 years ago for Toshiba), Makoto Yoshimi is now Chief Scientist of Soitec Asia. "This book describes what SOI is all about", he says, "and provides an introduction for device engineers and graduate students."

Dr. Shigeto Maegawa of Renesas Technology Corp. (Japan) notes that the book, "...captures the enthusiasm of the engineers who worked so tenaciously to make SOI a reality."


Jan. 1, 2004Silicon-on-Insulator Technology: Materials to VLSI

by Jean-Pierre Colinge
3rd ed., 2004, 384 p., Hardcover
ISBN: 978-1-4020-7773-9
Summary: The third edition of Professor Jean-Pierre Colinge's book, Silicon-on-Insulator Technology: Materials to VLSI is available from www.springeronline.com. A prolific author, Professor Colinge has written a book that covers the history of SOI technology and provides in-depth analyses of the physics, device properties and applications. It is recommended for both specialists and non-specialists, and as a textbook at the graduate level.