RF SOI workshop 2014 FD-SOI Forum 2014 SureCore Technology White paper 20nm FD SOI logic evaluation model cards available Evaluation of Fully-Depleted SOI for next generation Mobile Consumer Chips Fully Depleted SOI Corner

SureCore Technology White paper

SureCore technology not driven by Vmin reduction allows to avoid a number of issues with bit cell stability and reduce power consumption dramatically

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20nm FD SOI logic evaluation model cards available

Enabled in cooperation with Accelicon

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Evaluation of Fully-Depleted SOI for next generation Mobile Consumer Chips

By Horacio Mendez, Executive Director

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Fully Depleted SOI Corner

Access to all workshops' presentations, white papers, articles and more!

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2014 FD-SOI Forum

Shanghai, September 22, 2014

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2014 RF-SOI Workshop

Shanghai, September 23, 2014

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Hot news

Forum: 2014 FD-SOI - Shanghai, China

PRESENTATION
Forum: 2014 FD-SOI - Shanghai, China

FDSOI 28nm has moved into the manufacturing and volume production phase. It offers the IC industry the unique features of being able to fabricate at competitive cost, ultra low power, high speed ICs. It is a game changer technology platform that brings new powerful elements to the designers and a strong differentiation potential at IC and system level. The goal of this international forum is to gather IC industry decision makers, technology owners, opinion leaders, market analysts to exchange and assess the opportunities that FDSOI technology brings to the ever changing field of mobility internet, internet of things with their increasing demand for ultra low power operation at high performance.

Workshop: 2014 RF-SOI - Shanghai, China

PRESENTATION
Workshop: 2014 RF-SOI - Shanghai, China

Enhancing RF signal integrity is one of the key focus of the RF industry as they build towards 4G-LTE advanced and 5G standards. The RF ecosystem moves on a path of co-optimization of substrate-devices and design to be able to respond to the increasing connectivity needs. The Shanghai RFSOI Workshop 2014 provides the opportunities to meet and discuss with industry‘s leading RF-SOI technologists and researchers to address the technical challenges of RF device’s design, manufacturing and applications by leveraging RF-SOI substrates’ unique characteristics. This workshop creates a forum for constructive exchange and discussion on this very fast growing field.

IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference

EVENT
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference

Good FD-SOI Summer Reading & Viewing

ARTICLE
Good FD-SOI Summer Reading & Viewing [Advanced Substrate News]

Over the summer, there have been a number of excellent posts on various sites related to FD-SOI, showing that interest is running ever higher. But, if you’ve been fortunate enough to have had some vacation time, you might have missed some of them, so here’s a brief listing to help you catch up.

Synopsys, STMicroelectronics and Samsung Collaborate to Accelerate Adoption of 28-nm FD-SOI Technology for SoC Design

ARTICLE
Synopsys, STMicroelectronics and Samsung Collaborate to Accelerate Adoption of 28-nm FD-SOI Technology for SoC Design [Synopsys]

Synopsys Galaxy Design Platform Enables Designers to Take Full Advantage of High-Performance and Low Power of 28-nm FD-SOI