SOI Applications

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Updated: April 30, 2012

SOI Fundamentals

Process Technology

SOI Scalability
[by Harry Gries, ASIC Methodology and EDA Technology Consultant]

Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation
[Applied Physics Letters, Vol. 96, Issue 24]

> More articles

Fully Depleted SOI

Design/IP

NEW Leti: Adding Strain to FD-SOI for 20nm and Beyond
[Advanced Substrate News]

Interview With ST-Ericsson's Chief Chip Architect: SOCs on 28nm FD-SOI – When, Why and How
ST-Ericsson's Chief Chip Architect Louis Tannyeres talks with ASN about the move to 28nm FD-SOI for smartphones and tablet SOCs. [Advanced Substrate News]

> More articles

Analog/HV/RF

Photonics

Ultra-high Speed, All-optical Wavelength Converters Using Single SOA and SOI Photonic Integrated Circuits
We report a new family of ultra-fast all-optical wavelength converters. The device architecture employs a single SOA and filtering elements integrated in silicon-on-insulator substrates. These schemes enable high-integration density and low power consumption. [Department of Information Technology (INTEC), Ghent University]

Device engineering for silicon photonics
[NPG Asia Materials]

> More articles

Power

NEW Leti: Adding Strain to FD-SOI for 20nm and Beyond
[Advanced Substrate News]

Interview With ST-Ericsson's Chief Chip Architect: SOCs on 28nm FD-SOI – When, Why and How
ST-Ericsson's Chief Chip Architect Louis Tannyeres talks with ASN about the move to 28nm FD-SOI for smartphones and tablet SOCs. [Advanced Substrate News]

> More articles

Sensors/MEMS

SiTime: Using SOI Technology to Develop High-Performance MEMS Timing Solutions
A radical SOI-based approach puts SiTime at the top of the fast-growing silicon-based timing market. [Advanced Substrate News ]

How an SOI MEMS are built : MEMS first™ process
[SiTime]

> More articles

3D integration

Wireless Interconnects for Inter-tier Communication on 3D ICs
By Ankit More and Baris Taskin [Department of Electrical and Computer Engineering, Drexel University 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, USA]

Fraunhofer IZM-ASSID selects EV Group Temporary Bonding and Debonding Equipment for Devoloping Processes for High-Volume Manufacturing of 3D ICS
EVG Systems Selected for Platform Flexibility, Functionality and Industry-Proven Reliability [EV Group (EVG)]

> More articles

Advanced Substrate News

Last post on May 02, 2012:

Consortium Website – What’s New

> Read this post

#19 – Spring/Summer 2012
Special Edition: FD-SOI Industrialization

  • Technology: ST/Soitec white paper excerpts
  • Apps – ST-Ericsson's NovaThor at 28nm (interview)
  • 20nm & Beyond: Chenming Hu; Leti
  • Wafers: Soitec's Roadmap
  • SOI Consortium – benchmarking

> Read the full edition

Press releases

Semiconductor industry workshop to address fully depleted SOI technology for mobile and consumer electronics

Attendees at Sixth Annual Forum to Receive Latest Information on Making Faster, Lower Power ICs with FD-SOI Wafers


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Boston, MA, February 6, 2012 – The sixth annual workshop on fully depleted silicon-on-insulator (FD-SOI) technology for advanced semiconductor architectures, featuring technical presentations and discussions among industry peers, will be held on February 24 at the Marriott Marquis Hotel in San Francisco, Calif. This forum, jointly organized by the SOI Industry Consortium, CEA-Leti and Soitec, provides semiconductor IC designers and manufacturers with the latest information and insights on using FD-SOI wafers to produce more power efficient ICs at the performance required for applications in mobile and consumer electronics.

Scheduled for the day after the IEEE International Solid-State Circuits Conference (ISSCC) at the same location, this year’s FD-SOI workshop features presentations by a variety of internationally renowned experts from the semiconductor industry and academia, who also will be available at the event for discussions with attendees. Presentation topics and speakers include:

  • Planar Fully Depleted Silicon Technology to Design Competitive SOCs at 28 nm and Beyond: Design Issues by Philippe Flatresse of STMicroelectronics
  • Planar Fully Depleted Silicon Technology to Design Competitive SOCs at 28 nm and Beyond: Technology Issues by Michel Haond of STMicroelectronics
  • Recent Advances in FD-SOI by Bruce Doris of IBM
  • Library and Physical IP Porting for FD-SOI by Jean-Luc Pelloie of ARM
  • 20 nm FD-SOI Models by Brian Chen of Accelicon and the SOI Industry Consortium
  • FinFET on SOI by Terrence Hook of IBM
  • Enabling Substrate Technology for a Large-Volume Fully Depleted Standard by Christophe Maleville of Soitec
  • Strain Options for FD-SOI by Olivier Faynot of CEA-Leti           
  • Advanced FD-SOI Design by Bora Nikolic of the University of California-Berkeley

Planar FD-SOI and SOI-based FinFETs are disruptive technologies, and serious contenders for the next generations of low-power, high-performance architectures. FD-SOI assures an evolutionary path from existing bulk technologies for fabricating next generation low-power, cost-effective CMOS devices for the fast-growing mobile and consumer electronics markets. Fully depleted transistors reach the required circuit speed for data-processing performance while consuming very little power, a critical need in portable devices such as smart phones and tablets.

“Our goal with this workshop is to share the latest product design and processing advances in the FD ecosystem, thereby increasing the semiconductor community’s level of confidence in FD architectures,” said program co-chairman Dr. Horacio Mendez, executive director of the SOI Industry Consortium. “Each year, this event attracts hundreds of industry opinion leaders and key decision makers as SOI applications continue to gain momentum in high-volume markets.”

The workshop is organized by Dr. Mendez, Dr. Olivier Faynot, head of CMOS technology at CEA-Leti, and Dr. Carlos Mazure, chief technology officer of Soitec.

Registration is free by registering at: http://www.soiconsortium.org/workshops/sanfrancisco/

 

About the SOI Industry Consortium
The SOI Industry Consortium is chartered with accelerating silicon-on-insulator (SOI) innovation into broad markets by promoting the benefits of SOI technology and reducing the barriers to adoption. Representing innovation leaders from the entire electronics industry infrastructure, current SOI Industry Consortium members include: AMD, Altera Corp., ARM, Cadence Design Systems, CEA-Léti, FEI, GLOBALFOUNDRIES, IBM, IMEC, Infotech, Kanazawa Institute of Technology, KLA-Tencor, MEMC, Mentor Graphics, MIT Lincoln Laboratories, Nvidia, Ritsumeikan University, Samsung, Semico, SEH Europe, Soitec, Stanford University, STMicroelectronics, Synopsys, Tyndall Institute, University of California-Berkeley, University Catholique de Louvain and UMC. Membership is open to all companies and institutions throughout the electronics industry.

For more information, please visit www.soiconsortium.org

 

Legal Note
The views and opinions expressed by the SOI Industry Consortium through officers in the SOI Industry Consortium or in this presentation or other communication vehicles are not necessarily representative of the views and opinions of individual members. Officers of the SOI Industry Consortium speaking on behalf of the Consortium should not be considered to be speaking for the member company or companies they are associated with, but rather as representing the views of the SOI Industry Consortium. Views and opinions are also subject to change without notice, and the SOI Industry Consortium assumes no obligation to update the information in this communication or accompanying discussions.

Press Contact:
Camille Darnaud-Dufour
Email: camille.darnaud-dufour@soiconsortium.org
Phone: + 33 6 79 49 51 43 (any time zone)


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